CARATTERISTICHE
●NPN epitaxial silicon, planar design.
●Collector-emitter voltage VCE=40V.
●Collector current IC=0.2A.
●Transition frequency fT>300 MHz @ IC=10mAdc, VCE=20Vdc, f=100MHz.
●In compliance with ER RoHS 2002/95/EC directives.
Etichetta sexy: mmbt3904, Cina, fornitori, produttori, commercio all'ingrosso, in stock
